APM4538K データシートの表示（PDF） - Anpec Electronics

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APM4538K

Dual Enhancement Mode MOSFET (N-and P-Channel)

Anpec Electronics 

APM4538K

Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)

Symbol

Parameter

Test Condition

Diode Characteristics

VSDa Diode Forward Voltage

Dynamic Characteristics b

RG Gate Resistance

Ciss Input Capacitance

Coss Output Capacitance

Crss

Reverse Transfer

Capacitance

td(ON) Turn-on Delay Time

Tr Turn-on Rise Time

ISD=1.7A, VGS=0V

ISD=-1.7A, VGS=0V

VGS=0V,VDS=0V,F=1MHz

N-Channel

VGS=0V,

VDS=25V,

Frequency=1.0MHz

P-Channel

VGS=0V,

VDS=-25V,

N-Channel

VDD=15V, RL=15Ω,

IDS=1A, VGEN=10V,

RG=6Ω

td(OFF) Turn-off Delay Time

Tf Turn-off Fall Time

P-Channel

VDD=-15V, RL=15Ω,

IDS=-1A, VGEN=-10V,

RG=6Ω

Gate Charge Characteristics b

Qg Total Gate Charge

Qgs Gate-Source Charge

Qgd Gate-Drain Charge

N-Channel

VDS=15V, VGS=10V,

IDS=5A

P-Channel

VDS=-15V, VGS=-10V,

IDS=-4A

Notes:

a : Pulse test ; pulse width≤300µs, duty cycle≤2%.

b : Guaranteed by design, not subject to production testing.

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

APM4538K

Unit

Min. Typ. Max.

0.8 1.3

V

-0.8 -1.3

2.8

Ω

11

450

770

65

pF

120

25

80

10 15

10 20

8

20

15 30

ns

20 28

25 50

5

15

15 30

15 21

26 35

4.5

nC

5.1

2.1

3.3

Copyright  ANPEC Electronics Corp.

3

Rev. B.1 - Mar., 2005

www.anpec.com.tw

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