ATF-54143 データシートの表示（PDF） - HP => Agilent Technologies

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ATF-54143

Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package

HP => Agilent Technologies 

ATF-54143 Die Model

Advanced_Curtice2_Model

MESFETM1

NFET=yes

Rf=

PFET=no

Vto=0.3

Beta=0.9

Lambda=82e-3

Alpha=13

Tau=

Tnom=16.85

Idstc=

Gscap=2

Cgs=1.73 pF

Cgd=0.255 pF

Gdcap=2

Fc=0.65

Rgd=0.25 Ohm

Rd=1.0125 Ohm

Ucrit=-0.72

Rg=1.0 Ohm

Vgexp=1.91

Gamds=1e-4

Vtotc=

Betatce=

Rgs=0.25 Ohm

Rs=0.3375 Ohm

Ld=

Lg=0.18 nH

Ls=

Cds=0.27 pF

Rc=250 Ohm

Crf=0.1 F

Gsfwd=

Gsrev=

Gdfwd=

Gdrev=

R1=

R2=

Vbi=0.8

Vbr=

Vjr=

Is=

Ir=

Imax=

Xti=

Eg=

N=

Fnc=1 MHz

R=0.08

P=0.2

C=0.1

Taumdl=no

wVgfwd=

wBvgs=

wBvgd=

wBvds=

wldsmax=

wPmax=

AllParams=

ATF-54143 curtice ADS Model

GATE

Port

G

Num=1

SOURCE

Port

S1

Num=2

INSIDE Package

Var VAR

Egn VAR1

K=5

Z2=85

Z1=30

C

C1

C=0.13 pF

TLINP

TLINP

TL4

TL3

Z=Z1 Ohm Z=Z2 Ohm

L=15 mil L=25 mil

K=1

K=K

A=0.000 A=0.000

F=1 GHz F=1 GHz

TanD=0.001 TanD=0.001

TLINP

TLINP

TL1

TL2

Z=Z2/2 Ohm

Z=Z2/2 Ohm

L=20 0 mil

L=20 0 mil

K=K

K=K

A=0.0000 GaAsFET

A=0.0000

F=1 GHz FET1

F=1 GHz

TanD=0.001 Mode1=MESFETM1 TanD=0.001

L

L1

L=0.477 nH

R=0.001

Mode=Nonlinear

L

L6

L=0.175 nH

R=0.001

TLINP

TLINP

TL7

TL8

Z=Z2/2 OhmZ=Z1 Ohm

L=5.0 mil L=15.0 mil

C

K=K

K=1

C2

A=0.0000 A=0.0000

C=0.159 pF F=1 GHz F=1 GHz

TanD=0.001 TanD=0.001

TLINP

TL10

Z=Z1 Ohm

L=15 mil

TLINP

TL9

Z=Z2 Ohm

L=10.0 mil

L

L4

L=0.4 nH

R=0.001

K=1

K=K

A=0.000 A=0.000

F=1 GHz F=1 GHz

TanD=0.001 TanD=0.001

MSub

L

L7

L=0.746 nH

R=0.001

MSUB

MSub1

H=25.0 mil

Er=9.6

Mur=1

Cond=1.0E+50

Hu=3.9e+034 mil

T=0.15 mil

TanD=0

Rough=0 mil

TLINP

TLINP

TL5

TL6

Z=Z2 Ohm Z=Z1 Ohm

L=26.0 mil L=15.0 mil

K=K

K=1

A=0.0000 A=0.0000

F=1 GHz F=1 GHz

TanD=0.001 TanD=0.001

SOURCE

Port

S2

Num=4

DRAIN

Port

D

Num=3

12

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