BAP64-06W データシートの表示（PDF） - Philips Electronics
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BAP64-06W Datasheet PDF : 8 Pages
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Philips Semiconductors
Silicon PIN diode
Product specification
BAP64-06W
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
Per diode
VF
forward voltage
IR
reverse current
Cd
diode capacitance
rD
diode forward resistance
|s21|2
isolation
|s21|2
insertion loss
|s21|2
insertion loss
|s21|2
insertion loss
|s21|2
insertion loss
τL
charge carrier life time
LS
series inductance
IF = 50 mA
VR = 100 V
VR = 20 V
VR = 0; f = 1 MHz
VR = 1 V; f = 1 MHz
VR = 20 V; f = 1 MHz
IF = 0.5 mA; f = 100 MHz; note 1
IF = 1 mA; f = 100 MHz; note 1
IF = 10 mA; f = 100 MHz; note 1
IF = 100 mA; f = 100 MHz; note 1
VR = 0; f = 900 MHz
VR = 0; f = 1800 MHz
VR = 0; f = 2450 MHz
IF = 0.5 mA; f = 900 MHz
IF = 0.5 mA; f = 1800 MHz
IF = 0.5 mA; f = 2450 MHz
IF = 1 mA; f = 900 MHz
IF = 1 mA; f = 1800 MHz
IF = 1 mA; f = 2450 MHz
IF = 10 mA; f = 900 MHz
IF = 10 mA; f = 1800 MHz
IF = 10 mA; f = 2450 MHz
IF = 100 mA; f = 900 MHz
IF = 100 mA; f = 1800 MHz
IF = 100 mA; f = 2450 MHz
when switched from IF = 10 mA to
IR = 6 mA; RL = 100 Ω;
measured at IR = 3 mA
IF = 100 mA; f = 100 MHz
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
TYP. MAX. UNIT
0.95 1.1 V
−
10
µA
−
1
µA
0.52 −
pF
0.37 −
pF
0.23 0.35 pF
20
40
Ω
10
20
Ω
2
3.8 Ω
0.7 1.35 Ω
18.5 −
dB
13.5 −
dB
10.9 −
dB
1.86 −
dB
2.06 −
dB
2.23 −
dB
1.01 −
dB
1.06 −
dB
1.10 −
dB
0.19 −
dB
0.21 −
dB
0.27 −
dB
0.08 −
dB
0.10 −
dB
0.16 −
dB
1.55 −
µs
1.6 −
nH
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
VALUE
250
UNIT
K/W
2001 Apr 17
3
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