Philips Semiconductors
Silicon PIN diode
Product specification
BAP64-06W
GRAPHICAL DATA
103
handbook, halfpage
rD
(Ω)
102
10
1
MLD596
600
handbook, halfpage
Cd
(fF)
400
200
MLD597
10−110−1
1
10
102
IF (mA)
f = 100 MHz; Tj = 25 °C.
Fig.2 Forward resistance as a function of forward
current; typical values.
0
0
4
8
12
16
20
VR (V)
f = 1 MHz; Tj = 25 °C.
Fig.3 Diode capacitance as a function of reverse
voltage; typical values.
handbook, h0alfpage
s21 2
(1)
(2)
(dB)
−1
(3)
(4)
−2
−3
MLD598
−4
−5
0.5
1
(1) IF = 100 mA.
(2) IF = 10 mA.
1.5
2
(3) IF = 1 mA.
(4) IF = 0.5 mA.
2.5
3
f (GHz)
Diode inserted in series with a 50 Ω stripline circuit
and biased via the analyzer Tee network; Tamb = 25 °C.
Fig.4 Insertion loss (|s21|2) of the diode as a
function of frequency; typical values.
2001 Apr 17
0
handbook, halfpage
s21 2
(dB)
−5
MLD599
−10
−15
−20
−25
0.5
1
1.5
2
2.5
3
f (GHz)
Diode zero biased and inserted in series with a 50 Ω stripline circuit.
Tamb = 25 °C.
Fig.5 Isolation (|s21|2) of the diode as a function
of frequency; typical values.
4