BC846BDW1(2016) データシートの表示（PDF） - ON Semiconductor

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BC846BDW1
(Rev.:2016)

NPN Duals Dual General Purpose Transistors

ON Semiconductor 

BC846BDW1, BC847BDW1, BC848CDW1

TYPICAL CHARACTERISTICS − BC848CDW1

1000

900

150°C

VCE = 5 V

800

700

600

25°C

500

400

−55°C

300

200

100

0

0.0001

0.001

0.01

0.1

1

IC, COLLECTOR CURRENT (A)

Figure 23. DC Current Gain at VCE = 5 V

1000

900

150°C

VCE = 10 V

800

700

600

25°C

500

400

−55°C

300

200

100

0

0.0001

0.001

0.01

0.1

1

IC, COLLECTOR CURRENT (A)

Figure 24. DC Current Gain at VCE = 10 V

0.20

0.18

0.16

IC/IB = 10

0.30

0.25

IC/IB = 20

0.14

0.20

0.12

0.10

150°C

0.15

0.08

25°C

0.06

0.10

25°C

150°C

0.04

0.02

−55°C

0.05

−55°C

0.00

0.00

0.0001

0.001

0.01

0.1

0.0001

0.001

0.01

0.1

IC, COLLECTOR CURRENT (A)

Figure 25. VCE at IC/IB = 10

IC, COLLECTOR CURRENT (A)

Figure 26. VCE at IC/IB = 20

1.1

IC/IB = 10

1.0

0.9

0.8

−55°C

0.7

25°C

0.6

0.5

150°C

0.4

0.3

0.2

0.0001

0.001

0.01

IC, COLLECTOR CURRENT (A)

Figure 27. VBE(sat) at IC/IB = 10

1.2

IC/IB = 20

1.0

0.8

−55°C

25°C

0.6

0.4

150°C

0.2

0.0

0.1

0.0001

0.001

0.01

0.1

IC, COLLECTOR CURRENT (A)

Figure 28. VBE(sat) at IC/IB = 20

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