BC856BDW1T1G データシートの表示（PDF） - ON Semiconductor
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BC856BDW1T1G Datasheet PDF : 6 Pages
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BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mA)
BC856 Series
BC857 Series
BC858 Series
V(BR)CEO
Collector −Emitter Breakdown Voltage
(IC = −10 mA, VEB = 0)
BC856 Series
BC857B Only
BC858 Series
V(BR)CES
Collector −Base Breakdown Voltage
(IC = −10 mA)
BC856 Series
BC857 Series
BC858 Series
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = −1.0 mA)
BC856 Series
BC857 Series
BC858 Series
V(BR)EBO
Collector Cutoff Current (VCB = −30 V)
Collector Cutoff Current (VCB = −30 V, TA = 150°C)
ON CHARACTERISTICS
ICBO
DC Current Gain
hFE
(IC = −10 mA, VCE = −5.0 V) BC856B, BC857B
BC857C, BC858C
(IC = −2.0 mA, VCE = −5.0 V) BC856B, BC857B
BC857C, BC858C
Collector −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
Base −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
Base −Emitter On Voltage
(IC = −2.0 mA, VCE = −5.0 V)
(IC = −10 mA, VCE = −5.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
Noise Figure
(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW,
f = 1.0 kHz, BW = 200 Hz)
VCE(sat)
VBE(sat)
VBE(on)
fT
Cob
NF
Min
−65
−45
−30
−80
−50
−30
−80
−50
−30
−5.0
−5.0
−5.0
−
−
−
−
220
420
−
−
−
−
−0.6
−
100
−
−
Typ
Max
Unit
V
−
−
−
−
−
−
V
−
−
−
−
−
−
V
−
−
−
−
−
−
V
−
−
−
−
−
−
−
−15
nA
−
−4.0
mA
−
150
−
270
−
290
475
520
800
V
−
−0.3
−
−0.65
V
−0.7
−
−0.9
−
V
−
−0.75
−
−0.82
−
−
MHz
−
4.5
pF
−
10
dB
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