BCR3PM-12LB データシートの表示（PDF） - Renesas Electronics
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BCR3PM-12LB
Renesas Electronics
BCR3PM-12LB Datasheet PDF : 8 Pages
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BCR3PM-12LB
Performance Curves
Maximum On-State Characteristics
102
7
5
3
2
101
7
Tj = 150°C
5
3
2
100
7
5
3
Tj = 25°C
2
10–1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
On-State Voltage (V)
Gate Characteristics (I, II and III)
5
3
2
101
7
5
3 VGT
2
PGM = 3W
PG(AV) = 0.3W
IGM =
0.5A
100
7
5
3
IRGT I
2
VGD = 0.1V
10–1
7
IFGT I, IRGT III
5100 2 3 5 7101 2 3 5 7102 2 3 5 7103
Gate Current (mA)
Gate Trigger Voltage vs.
Junction Temperature
103
7
Typical Example
5
3
2
102
7
5
3
2
101
–60 –40–20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
R07DS0098EJ0300 Rev.3.00
Sep 13, 2010
Preliminary
Rated Surge On-State Current
40
35
30
25
20
15
10
5
0100 2 3 5 7 101 2 3 5 7 102
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs.
Junction Temperature
103
7
Typical Example
5
3
IRGT III
2
102
7 IFGT I, IRGT I
5
3
2
101
–60 –40–20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
102 2 3 5 7103 2 3 5 7
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
010–1 2 3 5 7100 2 3 5 7101 2 3 5 7102
Conduction Time (Cycles at 60Hz)
Page 3 of 7
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