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BCW29 データシートの表示(PDF) - Philips Electronics

部品番号
コンポーネント説明
メーカー
BCW29
Philips
Philips Electronics Philips
BCW29 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Philips Semiconductors
PNP general purpose transistors
Product specification
BCW29; BCW30
FEATURES
Low current (max. 100 mA)
Low voltage (max. 32 V).
APPLICATIONS
General purpose switching and amplification.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BCW31 and BCW32.
MARKING
TYPE NUMBER
BCW29
BCW30
MARKING CODE(1)
C1
C2
Note
1. = p : Made in Hong Kong.
= t : Made in Malaysia.
handbook, halfpage
3
3
1
1
Top view
2
2
MAM256
Fig.1 Simplified outline SOT23 and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base; IC = 2 mA
open collector
Tamb 25 °C
MIN.
65
65
MAX.
32
32
5
100
200
200
250
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 Apr 13
2

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