BF1100R データシートの表示（PDF） - Philips Electronics
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BF1100R Datasheet PDF : 14 Pages
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Philips Semiconductors
Dual-gate MOS-FETs
Product specification
BF1100; BF1100R
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VG2-S = 4 V; ID = 10 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
yfs
Cig1-s
Cig2-s
Cos
Crs
F
forward transfer admittance pulsed; Tj = 25 °C
VDS = 9 V
24
VDS = 12 V
24
input capacitance at gate 1 f = 1 MHz
VDS = 9 V
−
VDS = 12 V
−
input capacitance at gate 2 f = 1 MHz
VDS = 9 V
−
VDS = 12 V
−
drain-source capacitance f = 1 MHz
VDS = 9 V
−
VDS = 12 V
−
reverse transfer capacitance f = 1 MHz
VDS = 9 V
−
VDS = 12 V
−
noise figure
f = 800 MHz; GS = GSopt; BS = BSopt
VDS = 9 V
−
VDS = 12 V
−
TYP.
28
28
2.2
2.2
1.6
1.4
1.4
1.1
25
25
2
2
MAX.
33
33
2.6
2.6
−
−
1.8
1.5
35
35
2.8
2.8
UNIT
mS
mS
pF
pF
pF
pF
pF
pF
fF
fF
dB
dB
hagnadbinook, 0halfpage
reduction
(dB)
10
MLD157
20
30
40
50
0
1
2
3
4
VAGC (V)
f = 50 MHz.
Tj = 25 °C.
Fig.5 Gain reduction as a function of the AGC
voltage; typical values.
1995 Apr 25
120
handbook, halfpage
Vunw
(dBµV)
110
100
MLD158
(1)
(2)
90
80
0
10
20
30
40
50
gain reduction (dB)
(1) RG = 250 kΩ to VGG = 12 V
(2) RG = 180 kΩ to VGG = 9 V
fw = 50 MHz; funw = 60 MHz; Tamb = 25 °C.
Fig.6 Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values; see Fig.27.
5
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