BF1009S(1999) データシートの表示（PDF） - Infineon Technologies
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BF1009S Datasheet PDF : 4 Pages
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BF 1009S
Silicon N-Channel MOSFET Tetrode
For low noise, high gain controlled
input stages up to 1GHz
Operating voltage 9V
Integrated bias network
3
4
2
AGC
G2
HF
G1
Input
Drain
HF Output
+ DC
1 VPS05178
GND
EHA07215
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BF 1009S
JLs
1 = S 2 = D 3 = G2 4 = G1 SOT-143
Maximum Ratings
Parameter
Drain-source voltage
Continuos drain current
Gate 1/gate 2 peak source current
Gate 1 (external biasing)
Total power dissipation, TS 76 °C
Storage temperature
Channel temperature
Thermal Resistance
Channel - soldering point
Symbol
VDS
ID
±IG1/2SM
+VG1SE
Ptot
Tstg
Tch
Rthchs
Value
Unit
12
V
25
mA
10
3
V
200
mW
-55 ... 150
°C
150
370
K/W
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
1
May-05-1999
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