Philips Semiconductors
PNP high-voltage transistors
Product specification
BF421L; BF423L
FEATURES
• Low current (max. 50 mA)
• High voltage (max. 300 V)
• Available with a higher power rating (830 mW) under
type number: BF423.
APPLICATIONS
• Primarily intended for telephony applications.
DESCRIPTION
PNP transistor in a TO-92; SOT54 plastic package.
NPN complement: BF422L.
PINNING
PIN
1
2
3
base
collector
emitter
DESCRIPTION
handbook, halfpage1
2
3
2
1
3
MAM285
Fig.1 Simplified outline (TO-92; SOT54) and
symbol.
ORDERING INFORMATION
TYPE NUMBER
BF421L
BF423L
NAME
SC-43A
PACKAGE
DESCRIPTION
plastic single-ended leaded (through hole) package; 3 leads
VERSION
SOT54
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VCBO
collector-base voltage
BF421L
BF423L
VCEO
collector-emitter voltage
BF421L
BF423L
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C
MIN. MAX. UNIT
−
−300 V
−
−250 V
−
−300 V
−
−250 V
−
−5
V
−
−50
mA
−
−100 mA
−
−100 mA
−
625
mW
−65
+150 °C
−
150
°C
−65
+150 °C
2004 Nov 10
2