BF1215 データシートの表示（PDF） - NXP Semiconductors.

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BF1215

Dual N-channel dual gate MOSFET

NXP Semiconductors. 

BF1215

Dual N-channel dual gate MOSFET

Rev. 01 — 6 May 2010

Product data sheet

1. Product profile

CAUTION

1.1 General description

The BF1215 is a combination of two dual gate MOSFET amplifiers with shared source

lead, shared gate2 lead and an integrated switch.

The source and substrate are interconnected. Internal bias circuits enable DC stabilization

and a very good cross modulation performance during AGC. Integrated diodes between

the gates and source protect against excessive input voltage surges. The transistor is

availiable as a SOT363 micro-miniature plastic package.

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features and benefits

„ Two low noise gain controlled amplifiers in a single package; one with full internal bias

and one with partial internal bias

„ Superior cross modulation performance during AGC

„ High forward transfer admittance to input capacitance ratio

„ Suitable for VHF and UHF applications: both amplifiers are optimized for VHF

applications.

„ Internal switch reduces external components

1.3 Applications

„ Gain controlled low noise amplifiers for VHF and UHF applications with a 5 V supply

‹ Digital and analog television tuners

‹ Professional communication equipment

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