BF1218 データシートの表示（PDF） - NXP Semiconductors.
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BF1218 Datasheet PDF : 23 Pages
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NXP Semiconductors
BF1218
Dual N-channel dual gate MOSFET
10
bos, gos
(mS)
1
10−1
001aag360
bos
gos
10−2
10
102
103
f (MHz)
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V; ID(A) = 19 mA
Fig 16. Amplifier A: output admittance as a function of frequency; typical values
8.1.2 Scattering parameters for amplifier A
Table 9. Scattering parameters for amplifier A
VDS(A) = 5 V; VG2-S = 4 V; ID(A) = 19 mA; VDS(B) = 0 V; VG1-S(B) = 0 V; Tamb = 25 C; typical values.
F
(MHz)
s11
Magnitude
(ratio)
Angle
(degree)
s21
Magnitude
(ratio)
Angle
(degree)
s12
Magnitude
(ratio)
Angle
(degree)
s22
Magnitude
(ratio)
40
0.9927
4.10
3.1833
175.69
0.0006
92.99
0.9927
100
0.9897
7.68
3.1743
171.77
0.0011
81.72
0.9923
200
0.9852
15.36
3.1494
163.56
0.0023
79.23
0.9912
300
0.9758
22.84
3.1146
155.46
0.0033
74.65
0.9904
400
0.9655
30.19
3.0718
147.53
0.0042
70.46
0.9890
500
0.9513
37.55
3.0156
139.61
0.0049
66.38
0.9874
600
0.9341
44.85
2.9482
131.74
0.0056
62.22
0.9853
700
0.9160
51.99
2.8755
124.04
0.0061
58.44
0.9832
800
0.8964
58.99
2.8003
116.41
0.0064
54.48
0.9806
900
0.8737
65.84
2.7206
108.93
0.0066
50.78
0.9793
1000
0.8499
72.51
2.6352
101.62
0.0067
46.49
0.9776
Angle
(degree)
1.24
2.54
5.09
7.60
10.10
12.60
15.11
17.61
20.12
22.57
25.05
8.1.3 Noise data for amplifier A
Table 10. Noise data for amplifier A
VDS(A) = 5 V; VG2-S = 4 V; ID(A) = 19 mA; VDS(B) = 0 V; VG1-S(B) = 0 V; Tamb = 25 C; typical values;
unless otherwise specified.
f (MHz)
NFmin (dB)
opt
(ratio)
(degree)
rn (ratio)
400
0.9
0.77
22.7
0.65
800
1.1
0.73
45.75
0.62
BF1218_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 14 April 2010
© NXP B.V. 2010. All rights reserved.
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