BF485PN データシートの表示（PDF） - Philips Electronics
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BF485PN Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN/PNP high voltage transistors
Product specification
BF485PN
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
from junction to ambient
in free air; note 1
208
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
Per transistor; for the PNP transistor with negative polarity
ICBO
IEBO
hFE
VCEsat
VBEsat
Cc
fT
collector-base cut-off current
emitter-base cut-off current
DC current gain
saturation voltage
saturation voltage
collector capacitance
transition frequency
IE = 0; VCB = 300 V;
IE = 0; VCB = 250 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 1 mA; VCE = 10 V
IC = 30 mA; VCE = 10 V
IC = 20 mA; IB = 2 mA
IC = 20 mA; IB = 2 mA
IE = Ie = 0; VCB = 20 V; f = 1 MHz
IC = 10 mA; VCE = 20 V; f = 100 MHz
MIN. MAX. UNIT
−
50
nA
−
50
µA
−
100 nA
60
−
50
−
−
250 mV
−
850 mV
−
6
pF
50
−
MHz
300
handbook, halfpage
hFE
(1)
200
(2)
100
(3)
MLD391
0
10−1
1
TR1 (NPN); VCE = 10 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
10
102
IC (mA)
Fig.2 DC current gain as a function of collector
current: typical values.
handboo2k,0h0alfpa(6g)e (5) (4) (3) (2)
(1)
IC
(mA)
150
(7)
(8)
(9)
100
(10)
50
MLD392
0
0
2
4
6
TR1 (NPN).
(1) IB = 30 mA.
(2) IB = 27 mA.
(3) IB = 24 mA.
(4) IB = 21 mA.
(5) IB = 18 mA.
(6) IB = 15 mA.
(7) IB = 12 mA.
8
10
VCE (V)
(8) IB = 9 mA.
(9) IB = 6 mA.
(10) IB = 3 mA.
Fig.3 Collector current as a function of
collector-emitter voltage; typical values.
2000 Aug 02
3
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