BF859 データシートの表示（PDF） - Philips Electronics

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BF859

NPN high-voltage transistor

Philips Electronics 

Philips Semiconductors

NPN high-voltage transistors

Product specification

BF857; BF858; BF859

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

VCBO

VCEO

VEBO

IC

ICM

IBM

Ptot

Tstg

Tj

Tamb

collector-base voltage

BF857

BF858

BF859

collector-emitter voltage

BF857

BF858

BF859

emitter-base voltage

collector current (DC)

peak collector current

peak base current

total power dissipation

storage temperature

junction temperature

operating ambient temperature

open emitter

open base

open collector

Tamb ≤ 25 °C

Tmb ≤ 75 °C

MIN. MAX. UNIT

−

160

V

−

250

V

−

300

V

−

160

V

−

250

V

−

300

V

−

5

V

−

100

mA

−

300

mA

−

100

mA

−

2

W

−

6

W

−65

+150 °C

−

150

°C

−65

+150 °C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-a

Rth j-mb

thermal resistance from junction to ambient

thermal resistance from junction to mounting base

VALUE

62.5

12.5

UNIT

K/W

K/W

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

ICBO

ICBO

ICBO

IEBO

hFE

VCEsat

Cre

fT

collector cut-off current

BF857

collector cut-off current

BF858

collector cut-off current

BF859

emitter cut-off current

DC current gain

collector-emitter saturation voltage

feedback capacitance

transition frequency

CONDITIONS

MIN.

IE = 0; VCB = 100 V

−

IE = 0; VCB = 200 V

−

IE = 0; VCB = 250 V

−

IC = 0; VEB = 5 V

−

IC = 30 mA; VCE = 10 V

26

IC = 30 mA; IB = 6 mA

−

IC = ic = 0; VCE = 30 V; f = 1 MHz

−

IC = 15 mA; VCE = 10 V; f = 100 MHz 90

MAX. UNIT

0.1

µA

0.1

µA

0.1

µA

100

nA

−

1

V

3

pF

−

MHz

1996 Dec 09

3

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