BF908WR データシートの表示（PDF） - Philips Electronics
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BF908WR Datasheet PDF : 7 Pages
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Philips Semiconductors
N-channel dual-gate MOS-FET
Preliminary specification
BF908WR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VDS
drain-source voltage
ID
drain current
IG1
gate 1 current
IG2
gate 2 current
Ptot
total power dissipation
up to Tamb = 45 °C; see Fig.2;
note 1
Tstg
storage temperature
Tj
operating junction temperature
Note
1. Device mounted on a printed-circuit board.
MIN.
−
−
−
−
−
MAX.
12
40
±10
±10
300
UNIT
V
mA
mA
mA
mW
−65
+150
°C
−
+150
°C
400
handbook, halfpage
Ptot
(mW)
300
MLD154
200
100
0
0
50
100
150
200
Tamb (oC)
Fig.2 Power derating curve.
1995 Apr 25
3
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