BF908WR データシートの表示（PDF） - Philips Electronics
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BF908WR Datasheet PDF : 7 Pages
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Philips Semiconductors
N-channel dual-gate MOS-FET
Preliminary specification
BF908WR
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
Rth j-s
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point Ts = 87 °C; note 2
Notes
1. Device mounted on a printed-circuit board.
2. Ts is the temperature at the soldering point of the source lead.
VALUE
350
210
UNIT
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V(BR)G1-SS
V(BR)G2-SS
V(P)G1-S
V(P)G2-S
IDSS
IG1-SS
IG2-SS
gate 1-source breakdown voltage VG2-S = VDS = 0; IG1-S = 10 mA 8
gate 2-source breakdown voltage VG1-S = VDS = 0; IG2-S = 10 mA 8
gate 1-source cut-off voltage
VG2-S = 4 V; VDS = 8 V; ID = 20 µA −
gate 2-source cut-off voltage
VG1-S = 4 V; VDS = 8 V; ID = 20 µA −
drain-source current
VG2-S = 4 V; VDS = 8 V; VG1-S = 0 3
gate 1 cut-off current
VG2-S = VDS = 0; VG1-S = 5 V
−
gate 2 cut-off current
VG1-S = VDS = 0; VG2-S = 5 V
−
−
20 V
−
20 V
−
−2
V
−
−1.5 V
15
27
mA
−
50 nA
−
50 nA
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VDS = 8 V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
yfs
Cig1-s
Cig2-s
Cos
Crs
F
forward transfer admittance pulsed; Tj = 25 °C
input capacitance at gate 1 f = 1 MHz
36
43
50
mS
2.4 3.1 4
pF
input capacitance at gate 2 f = 1 MHz
1.2 1.8 2.5 pF
drain-source capacitance f = 1 MHz
1.2 1.7 2.2 pF
reverse transfer capacitance f = 1 MHz
20
30
45
fF
noise figure
f = 200 MHz; GS = 2 mS; BS = BSopt −
f = 800 MHz; GS = GSopt; BS = BSopt
−
0.6 1.2 dB
1.5 2.5 dB
1995 Apr 25
4
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