BF908WR データシートの表示（PDF） - Philips Electronics
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BF908WR Datasheet PDF : 7 Pages
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Philips Semiconductors
N-channel dual-gate MOS-FET
Preliminary specification
BF908WR
handbook, 4h0alfpage
ID
(mA)
30
20
MRC281
VG2-S = 4 V
3V
2V
1.5 V
1V
10
0.5 V
0
–0.6 –0.4 –0.2 0
0V
0.2 0.4 0.6
VG1-S (V)
VDS = 8 V.
Tj = 25 °C.
Fig.3 Transfer characteristics; typical values.
30
handbook, halfpage
ID
(mA)
20
10
0
0
4
MRC282
VG1-S =
0.3 V
0.2 V
0.1 V
0V
–0.1 V
–0.2 V
–0.3 V
8
12
16
VDS (V)
VG2-S = 4 V.
Tj = 25 °C.
Fig.4 Output characteristics; typical values.
50
Yfs
(mS)
40
30
20
0.5 V
10
VG2-S = 0 V
0
0
5
10
15
MRC280
4V
3V
2V
1.5 V
1V
20
25
ID (mA)
60
Yfs
(mS)
40
MRC276
20
0
40
0
40
80
120
160
T j (o C)
VDS = 8 V.
Tj = 25 °C.
Fig.5 Forward transfer admittance as a function
of drain current; typical values.
Fig.6 Forward transfer admittance as a function
of junction temperature; typical values.
1995 Apr 25
5
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