BF909WR データシートの表示（PDF） - Philips Electronics
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BF909WR Datasheet PDF : 12 Pages
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Philips Semiconductors
N-channel dual-gate MOS-FET
Product specification
BF909WR
FEATURES
• Specially designed for use at 5 V supply voltage
• Short channel transistor with high forward transfer
admittance to input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz
• Superior cross-modulation performance during AGC.
PINNING
PIN
1
2
3
4
SYMBOL
DESCRIPTION
s, b source
d
drain
g2
gate 2
g1
gate 1
APPLICATIONS
• VHF and UHF applications with 3 to 7 V supply voltage handbook, halfpage
d
such as television tuners and professional
communications equipment.
3
4
DESCRIPTION
Enhancement type field-effect transistor in a plastic
microminiature SOT343R package. The transistor
consists of an amplifier MOS-FET with source and
substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
g2
g1
21
Top view
MAM192
s,b
Marking code: ME.
Fig.1 Simplified outline (SOT343R) and symbol.
QUICK REFERENCE DATA
SYMBOL
VDS
ID
Ptot
Tj
yfs
Cig1-s
Crs
F
PARAMETER
drain-source voltage
drain current
total power dissipation
operating junction temperature
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
CONDITIONS
f = 1 MHz
f = 800 MHz
MIN.
−
−
−
−
36
−
−
−
TYP.
−
−
−
−
43
3.6
30
2
MAX.
7
40
280
150
50
4.3
50
2.8
UNIT
V
mA
mW
°C
mS
pF
fF
dB
1997 Sep 05
2
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