BF909WR データシートの表示（PDF） - Philips Electronics
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BF909WR Datasheet PDF : 12 Pages
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Philips Semiconductors
N-channel dual-gate MOS-FET
Product specification
BF909WR
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
Rth j-s
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point Ts = 91 °C; note 2
Notes
1. Device mounted on a printed-circuit board.
2. Ts is the temperature at the soldering point of the source lead.
VALUE
350
210
UNIT
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
V(BR)G1-SS
V(BR)G2-SS
V(F)S-G1
V(F)S-G2
VG1-S(th)
VG2-S(th)
IDSX
gate 1-source breakdown voltage
gate 2-source breakdown voltage
forward source-gate 1 voltage
forward source-gate 2 voltage
gate 1-source threshold voltage
gate 2-source threshold voltage
drain-source current
IG1-SS
IG2-SS
gate 1 cut-off current
gate 2 cut-off current
Note
1. RG1 connects gate 1 to VGG = 5 V.
CONDITIONS
VG2-S = VDS = 0; IG1-S = 10 mA
VG1-S = VDS = 0; IG2-S = 10 mA
VG2-S = VDS = 0; IS-G1 = 10 mA
VG1-S = VDS = 0; IS-G2 = 10 mA
VG2-S = 4 V; VDS = 5 V; ID = 20 µA
VG1-S = VDS = 5 V; ID = 20 µA
VG2-S = 4 V; VDS = 5 V; RG1 = 120 kΩ;
note 1
VG2-S = VDS = 0; VG1-S = 5 V
VG1-S = VDS = 0; VG2-S = 5 V
MIN.
6
6
0.5
0.5
0.3
0.3
12
−
−
MAX. UNIT
15
V
15
V
1.5 V
1.5 V
1
V
1.2 V
20
mA
50
nA
50
nA
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VDS = 5 V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP.
yfs
Cig1-s
Cig2-s
Cos
Crs
F
forward transfer admittance pulsed; Tj = 25 °C
36
43
input capacitance at gate 1 f = 1 MHz
−
3.6
input capacitance at gate 2 f = 1 MHz
−
2.3
drain-source capacitance f = 1 MHz
−
2.3
reverse transfer capacitance f = 1 MHz
−
30
noise figure
f = 800 MHz; GS = GSopt; BS = BSopt −
2
MAX.
50
4.3
3
3
50
2.8
UNIT
mS
pF
pF
pF
fF
dB
1997 Sep 05
4
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