BF909WR データシートの表示（PDF） - Philips Electronics
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BF909WR Datasheet PDF : 12 Pages
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Philips Semiconductors
N-channel dual-gate MOS-FET
Product specification
BF909WR
Table 1 Scattering parameters: VDS = 5 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C
f
(MHz)
s11
MAGNITUDE
(ratio)
ANGLE
(deg)
s21
MAGNITUDE
(ratio)
ANGLE
(deg)
s12
MAGNITUDE
(ratio)
ANGLE
(deg)
50
100
200
300
400
500
600
700
800
900
1 000
0.985
0.978
0.957
0.931
0.899
0.868
0.848
0.816
0.792
0.772
0.754
−6.4
−12.6
−25.0
−36.5
−47.6
−57.4
−66.6
−74.6
−82.2
−89.3
−95.6
4.064
3.997
3.886
3.682
3.484
3.260
3.053
2.829
2.652
2.470
2.328
172.3
164.9
150.8
137.3
123.8
111.7
101.0
90.3
79.9
69.5
59.5
0.001
0.002
0.005
0.006
0.007
0.007
0.006
0.005
0.005
0.005
0.006
86.9
82.7
74.3
68.9
59.6
57.9
58.5
65.5
83.3
114.9
138.7
s22
MAGNITUDE
(ratio)
0.985
0.982
0.973
0.960
0.947
0.936
0.927
0.919
0.913
0.910
0.909
ANGLE
(deg)
−3.2
−6.4
−12.6
−18.6
−24.2
−29.6
−34.8
−39.8
−44.6
−49.5
−54.6
Table 2 Noise data: VDS = 5 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C
f
(MHz)
Fmin
(dB)
Γopt
(ratio)
800
2.00
0.603
(deg)
67.71
rn
0.581
1997 Sep 05
9
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