ASI10797 データシートの表示（PDF） - Advanced Semiconductor

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ASI10797

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor 

BLV80-28

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The BLV80-28 is Designed for 28 Volt

Class C VHF Power

AmplifierApplications up to 175 MHz.

FEATURES:

• ηC = 65 % min. at 80 W/175 MHz

• PG = 6.5 dB min. at 80 W/175 MHz

• Omnigold™ Metalization System

MAXIMUM RATINGS

IC

9.0 A

VCBO

65 V

VCEO

PDISS

TJ

TSTG

θJC

35 V

117 W @ TC = 25 OC

-65 OC to +200 OC

-65 OC to +150 OC

1.5 OC/W

PACKAGE STYLE .500 4L FLG

ORDER CODE: ASI10797

CHARACTERISTICS TC = 25 OC

SYMBOL

NONETEST CONDITIONS

BVCBO

IC = 20 mA

BVCEO

IC = 200 mA

BVEBO

IE = 10 mA

ICBO

VCB = 30 V

hFE

VCE = 25 V

IC = 3.5 A

MINIMUM TYPICAL MAXIMUM

65

35

4.0

1.5

15

100

UNITS

V

V

V

mA

---

COB

VCB = 30 V

f = 1.0 MHz

150

pF

PG

6.5

7.0

dB

ηC

VCC = 25 V

POUT = 80 W

f = 175 MHz

65

%

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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