BST122 データシートの表示（PDF） - Philips Electronics

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BST122

P-channel enhancement mode vertical D-MOS transistor

Philips Electronics 

Philips Semiconductors

P-channel enhancement mode vertical

D-MOS transistor

CHARACTERISTICS

Tj = 25 °C unless otherwise specified

Drain-source breakdown voltage

−ID = 10 µA; VGS = 0

Drain-source leakage current

−VDS = 48 V; VGS = 0

Gate-source leakage current

−VGS = 20 V; VDS = 0

Gate threshold voltage

−ID = 1 mA; VDS = VGS

Drain-source ON-resistance

−ID = 200 mA; −VGS = 10 V

Transfer admittance

−ID = 200 mA; −VDS = 15 V

Input capacitance at f = 1 MHz

−VDS = 10 V; VGS = 0

Output capacitance at f = 1 MHz

−VDS = 10 V; VGS = 0

Feedback capacitance at f = 1 MHz

−VDS = 10 V; VGS = 0

Switching times (see Figs 2 and 3)

−ID = 200 mA; −VDD = 50 V; −VGS = 0 to 10 V

−V(BR)DSS

−IDSS

−IGSS

−VGS(th)

RDS(on)

 Yfs

Ciss

Coss

Crss

ton

toff

Product specification

BST122

min.

60 V

max.

1 µA

max. 100 nA

min.

max.

max.

typ.

1.5 V

3.5 V

10 Ω

7.5 Ω

typ.

typ.

max.

125 mS

30 pF

45 pF

typ.

max.

20 pF

30 pF

typ.

max.

5 pF

10 pF

typ.

4 ns

typ.

10 ns

April 1995

4

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