BYV54HR データシートの表示（PDF） - STMicroelectronics
部品番号
コンポーネント説明
メーカー
BYV54HR Datasheet PDF : 8 Pages
| |||
BYV54HR
Characteristics
Table 4.
Symbol
s
Electrical measurements at ambiant temperature (per diode), Tamb = 22 ±3 °C
Characteristic
MIL-STD-750
test method
Test conditions(1)
Limits
Min. Max.
Units
IR
VF1(2)
VF2(2)
Reverse current
Forward voltage
4016
4011
DC method, VR = 200 V
Pulse method, IF = 20 A
Pulse method, IF = 30 A
-
50
µA
-
0.95 V
-
1.1
V
VBR Breakdown voltage
4021
IR = 100 µA
200
-
V
C Capacitance
4001
VR = 10 V, F = 1 MHz
-
400 pF
trr Reverse recovery time
4031
IF = 1 A, VR = 30 V,
dIF/dt = -50 A/µs
-
60
ns
Zth(j-c)(3)
Relative thermal impedance,
junction to case
3101
IH = 15 to 40 A, tH = 50 ms
IM = 50 mA, tmd = 100 µs
Calculate ΔVF(4) °C/W
1. Testing performed with both anode terminals 2 and 3 tied ttogehter
2. Pulse width ≤ 680 µs, duty cycle ≤ 2%
3. Performed only during screening tests parameter drift values (initial measurements for HTRB), go-no-go.
4. The limits for ΔVF shall be defined by the manufacturer on every lot in accordance with MIL-STD-750 Method 3101 and
shall guarantee the Rth(j-c) limits specified in maximum ratings.
Table 5. Electrical measurements at high and low temperatures (per diode)
Symbol
Characteristic
MIL-STD-750
test method
Test conditions(1)
Limits
Min. Max.
Units
IR Reverse current
4016
Tcase = +125 (+0, -5) °C
DC method, VR = 200 V
-
40
mA
VF1(2)
Forward voltage
4011
Tcase = +125 (+0, -5) °C
pulse method, IF = 20 A
Tcase = -55 (+0, -5) °C
pulse method, IF = 20 A
-
0.85 V
-
1.15 V
VF2(2)
Tcase = +125 (+0, -5) °C
1.0
pulse method, IF = 30 A
1. Read and record measurements shall be performed on a sample of 5 components with 0 failures allowed. Alternatively a
100% inspection may be performed.
2. Pulse width ≤ 680 µs, duty cycle ≤ 2%
To evaluate the conduction losses use the following equation:
P = 0.74 x IF(AV) + 1.00 x IF2(RMS )
Doc ID 17416 Rev 1
3/8
Share Link: 