APM4532(2003) データシートの表示（PDF） - Anpec Electronics

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APM4532
(Rev.:2003)

Dual Enhancement Mode MOSFET (N-and P-Channel)

Anpec Electronics 

APM4532

Typical Characteristics (Cont.)

P-Channel

On-Resistance vs. Gate-to-Source Voltage

0.30

-ID=3.5A

0.25

0.20

0.15

0.10

0.05

0.00

2 3 4 5 6 7 8 9 10

-VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Junction Temperature

1.8

-VGS=10V

-ID=3.5A

1.6

1.4

1.2

1.0

0.8

0.6

0.4

-50 -25 0 25 50 75 100 125 150

TJ - Junction Temperature (°C)

Gate Charge

10

9 -V =10 V

DS

8

-I = 3.5 A

DS

7

6

5

4

3

2

1

0

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QG - Gate Charge (nC)

Capacitance

800

Frequency=1MHz

700

600

Ciss

500

400

300

200

100

0

0

Coss

Crss

5

10

15

20

-VDS - Drain-to-Source Voltage (V)

Copyright  ANPEC Electronics Corp.

8

Rev. A.1 - Sep., 2002

www.anpec.com.tw

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