PZTA64 データシートの表示（PDF） - Philips Electronics
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PZTA64 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP Darlington transistor
Product specification
PZTA64
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
ICES
IEBO
hFE
VCEsat
VBEon
fT
collector cut-off current
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter voltage
transition frequency
IE = 0; VCB = −30 V
VBE = 0; VCE = −30 V
IC = 0; VEB = −10 V
VCE = −5 V; see Fig.2
IC = −10 mA
IC = −100 mA
IC = −100 mA; IB = −0.1 mA
IC = −100 mA; VCE = −5 V
IC = −10 mA; VCE = −5 V; f = 100 MHz
−
−
−
10 000
20 000
−
−
125
MAX.
−100
−100
−100
UNIT
nA
nA
nA
−
−
−1.5
V
−2
V
−
MHz
100000
handbook, full pagewidth
hFE
80000
60000
40000
20000
0
−1
VCE = −2 V.
MGD836
−10
−102
−103
IC (mA)
Fig.2 DC current gain; typical values.
1997 Jun 20
4
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