CY14B101L-SP25XCT データシートの表示（PDF） - Cypress Semiconductor

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CY14B101L-SP25XCT

1-Mbit (128K x 8) nvSRAM

Cypress Semiconductor 

PRELIMINARY

CY14B101L

Document History Page

Document Title: CY14B101L 1-Mbit (128K x 8) nvSRAM

Document Number: 001-06400

REV.

ECN NO.

Issue

Date

Orig. of

Change

Description of Change

**

425138 See ECN TUP New Data Sheet

*A

437321 See ECN TUP Show Data Sheet on External Web

*B

471966 See ECN

TUP Changed ICC3 from 5 mA to 10 mA

Changed ISB from 2 mA to 3 mA

Changed VIH(min) from 2.2V to 2.0V

Changed tRECALL from 40 µs to 50 µs

Changed Endurance from 1 Million Cycles to 500K Cycles

Changed Data Retention from 100 Years to 20 Years

Added Soft Sequence Processing Time Waveform

Updated Part Numbering Nomenclature and Ordering Information

*C

503272 See ECN

PCI Changed from Advance to Preliminary

Changed the term “Unlimited” to “Infinite”

Changed Endurance from 500K Cycles to 200K Cycles

Added temperature spec to Data Retention - 20 years at 55°C

Removed Icc1 values from the DC table for 25 ns and 35 ns industrial grade

Changed Icc2 value from 3 mA to 6 mA in the DC table

Added a footnote on VIH

Changed VSWITCH(min) from 2.55V to 2.45V

Added footnote 17 related to using the software command

Updated Part Nomenclature Table and Ordering Information Table

*D

597002 See ECN

TUP Removed VSWITCH(min) spec from the AutoStore/Power Up RECALL table

Changed tGLAX spec from 20 ns to 1 ns

Added tDELAY(max) spec of 70 µs in the hardware STORE cycle table

Removed tHLBL specification

Changed tSS specification form 70 µs (min) to 70 µs (max)

Changed VCAP(max) from 57 µF to 120 µF

*E

688776 See ECN VKN Added footnote related to HSB

Changed tGLAX to tGHAX

Document #: 001-06400 Rev. *E

Page 18 of 18

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