CY62136V データシートの表示（PDF） - Cypress Semiconductor
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CY62136V Datasheet PDF : 13 Pages
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Switching Characteristics Over the Operating Range [9]
Parameter
Description
Read Cycle
tRC
tAA
tOHA
tACE
tDOE
tLZOE
tHZOE
tLZCE
tHZCE
tPU
tPD
tDBE
tLZBE
tHZBE
Write Cycle[12, 13]
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low-Z[10]
OE HIGH to High-Z[10, 11]
CE LOW to Low-Z[10]
CE HIGH to High-Z[10, 11]
CE LOW to Power-up
CE HIGH to Power-down
BLE/BHE LOW to Data Valid
BLE/BHE LOW to Low-Z[10, 11]
BLE/BHE HIGH to High-Z[12]
tWC
tSCE
tAW
tHA
tSA
tPWE
tBW
tSD
tHD
tHZWE
tLZWE
Write Cycle Time
CE LOW to Write End
Address Set-up to Write End
Address Hold from Write End
Address Set-up to Write Start
WE Pulse Width
BLE/BHE LOW to Write End
Data Set-up to Write End
Data Hold from Write End
WE LOW to High-Z[10, 11]
WE HIGH to Low-Z[10]
55 ns
Min.
Max.
55
55
10
55
25
5
25
10
25
0
55
25
5
25
55
45
45
0
0
40
50
25
0
20
5
CY62136V MoBL®
70 ns
Min.
Max.
Unit
70
ns
70
ns
10
ns
70
ns
35
ns
5
ns
25
ns
10
ns
25
ns
0
ns
70
ns
35
ns
5
ns
25
ns
70
ns
60
ns
60
ns
0
ns
0
ns
50
ns
60
ns
30
ns
0
ns
25
ns
10
ns
Notes:
10. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
11. tHZOE, tHZCE, and tHZWE are specified with CL = 5 pF as in (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.
12. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can
terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.
13. The minimum write cycle time for write cycle 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD.
Document #: 38-05087 Rev. *D
Page 6 of 13
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