M36DR432B データシートの表示（PDF） - STMicroelectronics

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M36DR432B

32 Mbit (2Mb x16, Dual Bank, Page) Flash Memory and 4 Mbit (256K x16) SRAM, Multiple Memory Product

STMicroelectronics 

M36DR432A, M36DR432B

POWER CONSUMPTION

Power Down

The memory provides Reset/Power Down control

input RPF. The Power Down function can be acti-

vated only if the relevant Configuration Register bit

is set to '1'. In this case, when the RPF signal is

pulled at VSS the supply current drops to typically

ICC2 (see Table 24), the memory is deselected and

the outputs are in high impedance.If RPF is pulled

to VSS during a Program or Erase operation, this

operation is aborted in tPLQ7V and the memory

content is no longer valid (see Reset/Power Down

input description).

Power Up

The memory Command Interface is reset on Pow-

er Up to Read Array. Either EF or WF must be tied

to VIH during Power Up to allow maximum security

and the possibility to write a command on the first

rising edge of WF.

Supply Rails

Normal precautions must be taken for supply volt-

age decoupling; each device in a system should

have the VCCF rails decoupled with a 0.1µF capac-

itor close to the VCCF and VSS pins. The PCB trace

widths should be sufficient to carry the required

VCCF program and erase currents.

18/46

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