M36DR432ADZA データシートの表示（PDF） - STMicroelectronics

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M36DR432ADZA

32 Mbit (2Mb x16, Dual Bank, Page) Flash Memory and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product

STMicroelectronics 

M36DR432AD, M36DR432BD

Table 16. Flash DC Characteristics

Symbol

Parameter

Test Condition

Min

Typ

Max

Unit

ILI Input Leakage Current

0V ≤ VIN ≤ VDD

±1

µA

ILO Output Leakage Current

0V ≤ VOUT ≤ VDD

±5

µA

ICC1

Supply Current

(Read Mode)

EF = VIL, GF = VIH, f =

6MHz

3

6

mA

ICC2

Supply Current

(Power-Down)

RPF = VSS ± 0.2V

2

10

µA

ICC3 Supply Current (Standby)

EF = VDD ± 0.2V

10

50

µA

ICC4 (1)

Supply Current

(Program or Erase)

Word Program, Block Erase

in progress

10

20

mA

ICC5 (1)

Supply Current

(Dual Bank)

Program/Erase in progress

in one Bank, Read in the

other Bank

13

26

mA

IPPF1

VPPF Supply Current

(Program or Erase)

VPPF = 12V ± 0.6V

2

5

mA

IPPF2

VPPF Supply Current

(Standby or Read)

VPPF ≤ VDD

VPPF = 12V ± 0.6V

0.2

5

µA

100

400

µA

VIL Input Low Voltage

–0.5

0.4

V

VIH Input High Voltage

VDD – 0.4

VDD + 0.4

V

VOL Output Low Voltage

IOL = 100µA

0.1

V

VOH

Output High Voltage

CMOS

IOH = –100µA

VDD –0.1

V

VPPF(2,3)

VPPF Supply Voltage

(Program or Erase)

–0.4

Double Word Program

11.4

VDD + 0.4

V

12.6

V

Note: 1. Sampled only, not 100% tested.

2. VPPF may be connected to 12V power supply for a total of less than 100 hrs.

3. For standard program/erase operation VPPF is don’t care.

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