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M36DR432AD85ZA6T データシートの表示(PDF) - STMicroelectronics
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M36DR432AD85ZA6T
32 Mbit (2Mb x16, Dual Bank, Page) Flash Memory and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product
STMicroelectronics
M36DR432AD85ZA6T Datasheet PDF : 52 Pages
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M36DR432AD, M36DR432BD
Table 18. Flash Read AC Characteristics
M36DR432AD, M36DR432BD
Symbol Alt
Parameter
Test Condition
85
100
120
Min Max Min Max Min Max
t
AVAV
t
RC
Address Valid to Next
Address Valid
EF = V
IL
, GF = V
IL
85
(3)
100
120
t
AVQV
t
ACC
Address Valid to
Output Valid (Random)
EF = V
IL
, GF = V
IL
85
(3)
100
120
t
AVQV1
t
PAGE
Address Valid to
Output Valid (Page)
EF = V
IL
, GF = V
IL
30
(3)
35
45
t
ELQX
(1)
t
LZ
Chip Enable Low to
Output Transition
GF = V
IL
0
0
0
t
ELQV
(2)
t
CE
Chip Enable Low to
Output Valid
GF = V
IL
85
(3)
100
120
t
GLQX
(1)
t
OLZ
Output Enable Low to
Output Transition
EF = V
IL
0
0
0
t
GLQV
(2)
t
OE
Output Enable Low to
Output Valid
EF = V
IL
25
(3)
25
35
t
EHQX
t
OH
Chip Enable High to
Output Transition
GF = V
IL
0
0
0
t
EHQZ
(1)
t
HZ
Chip Enable High to
Output Hi-Z
GF = V
IL
20
(3)
25
35
t
GHQX
t
OH
Output Enable High to
Output Transition
EF = V
IL
0
0
0
t
GHQZ
(1)
t
DF
Output Enable High to
Output Hi-Z
EF = V
IL
20
(3)
25
35
t
AXQX
t
OH
Address Transition to
Output Transition
EF = V
IL
, GF = V
IL
0
0
0
Note: 1. Sampled only, not 100% tested.
2. GF may be delayed by up to t
ELQV
- t
GLQV
after the falling edge of EF without increasing t
ELQV
.
3. To be characterized.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
31/52
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