M29DW323DB70ZE6 データシートの表示（PDF） - STMicroelectronics

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M29DW323DB70ZE6

32 Mbit (4Mb x8 or 2Mb x16,Dual Bank 8:24, Boot Block) 3V Supply Flash Memory

STMicroelectronics 

M29DW323DT, M29DW323DB

Table 14. DC Characteristics

Symbol

Parameter

Test Condition

Min

ILI

Input Leakage Current

0V ≤ VIN ≤ VCC

ILO Output Leakage Current

0V ≤ VOUT ≤ VCC

ICC1(2) Supply Current (Read)

E = VIL, G = VIH,

f = 6MHz

ICC2 Supply Current (Standby)

E = VCC ±0.2V,

RP = VCC ±0.2V

ICC3 (1,2)

Supply Current (Program/

Erase)

Program/Erase

Controller active

VPP/WP =

VIL or VIH

VPP/WP = VPP

VIL

Input Low Voltage

–0.5

VIH Input High Voltage

0.7VCC

VPP

Voltage for VPP/WP Program

Acceleration

VCC = 2.7V ±10%

11.5

IPP

Current for VPP/WP Program

Acceleration

VCC = 2.7V ±10%

VOL Output Low Voltage

IOL = 1.8mA

VOH Output High Voltage

IOH = –100µA

VCC –0.4

VID Identification Voltage

11.5

VLKO

Program/Erase Lockout Supply

Voltage

1.8

Note: 1. Sampled only, not 100% tested.

2. In Dual operations the Supply Current will be the sum of ICC1(read) and ICC3 (program/erase).

Max

±1

±1

10

100

20

20

0.8

VCC +0.3

12.5

15

0.45

12.5

2.3

Unit

µA

µA

mA

µA

mA

mA

V

V

V

mA

V

V

V

V

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