CY7C1021CV33-10VXC(2008) データシートの表示（PDF） - Cypress Semiconductor

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CY7C1021CV33-10VXC
(Rev.:2008)

1-Mbit (64K x 16) Static RAM

Cypress Semiconductor 

CY7C1021CV33

Capacitance

Tested initially and after any design or process changes that may affect these parameters.

Parameter

Description

CIN

COUT

Input Capacitance

Output Capacitance

Test Conditions

TA = 25°C, f = 1 MHz, VCC = 3.3V

Thermal Resistance

Tested initially and after any design or process changes that may affect these parameters.

Parameter

Description

ΘJA Thermal Resistance

(Junction to Ambient)

ΘJC Thermal Resistance

(Junction to Case)

Test Conditions

Test conditions follow standard test

methods and procedures for measuring

thermal impedance, per EIA/JESD51

SOJ

65.06

34.21

AC Test Loads and Waveforms

Figure 3. AC Test Loads and Waveforms [4]

Max

Unit

8

pF

8

pF

TSOP II

76.92

15.86

FBGA

95.32

Unit

°C/W

10.68 °C/W

8-ns devices:

OUTPUT

Z = 50Ω

* CAPACITIVE LOAD CONSISTS

OF ALL COMPONENTS OF THE

TEST ENVIRONMENT

50 Ω

1.5V

(a)

30 pF*

10-, 12-, 15-ns devices: R 317Ω

3.3V

OUTPUT

30 pF*

R2

351Ω

(b)

3.0V

GND

ALL INPUT PULSES

90%

90%

10%

10%

Rise Time: 1 V/ns

(c)

Fall Time: 1 V/ns

High-Z characteristics:

3.3V

R 317Ω

OUTPUT

5 pF

R2

351Ω

(d)

Note

4. AC characteristics (except High-Z) for all 8-ns parts are tested using the load conditions shown in Figure (a). All other speeds are tested using the Thevenin load shown

in Figure (b). High-Z characteristics are tested for all speeds using the test load shown in Figure (d).

Document Number: 38-05132 Rev. *I

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