CY7C1021CV33-10ZXI データシートの表示（PDF） - Cypress Semiconductor
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CY7C1021CV33-10ZXI Datasheet PDF : 13 Pages
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Capacitance[5]
Parameter
Description
CIN
COUT
Input Capacitance
Output Capacitance
Thermal Resistance[5]
Test Conditions
TA = 25°C, f = 1 MHz, VCC = 3.3V
Parameter
Description
ΘJA Thermal Resistance
(Junction to Ambient)
ΘJC Thermal Resistance
(Junction to Case)
Test Conditions
Test conditions follow standard test
methods and procedures for
measuring thermal impedance, per
EIA/JESD51
SOJ
65.06
34.21
AC Test Loads and Waveforms[6]
CY7C1021CV33
Max.
Unit
8
pF
8
pF
TSOP II
76.92
15.86
FBGA
95.32
10.68
Unit
°C/W
°C/W
8-ns devices:
OUTPUT
Z = 50Ω
* CAPACITIVE LOAD CONSISTS
OF ALL COMPONENTS OF THE
TEST ENVIRONMENT
50 Ω
1.5V
(a)
30 pF*
10-, 12-, 15-ns devices: R 317Ω
3.3V
OUTPUT
30 pF*
R2
351Ω
(b)
3.0V
GND
ALL INPUT PULSES
90%
90%
10%
10%
Rise Time: 1 V/ns
(c)
Fall Time: 1 V/ns
High-Z characteristics:
3.3V
R 317Ω
OUTPUT
5 pF
R2
351Ω
(d)
Notes:
5. Tested initially and after any design or process changes that may affect these parameters.
6. AC characteristics (except High-Z) for all 8-ns parts are tested using the load conditions shown in Figure (a). All other speeds are tested using the Thevenin load
shown in Figure (b). High-Z characteristics are tested for all speeds using the test load shown in Figure (d).
Document #: 38-05132 Rev. *G
Page 5 of 13
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