DG2017DN データシートの表示（PDF） - Vishay Semiconductors

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DG2017DN

Low-Voltage, Low rON, Dual DPDT Analog Switch

Vishay Semiconductors 

New Product

DG2017

Vishay Siliconix

SPECIFICATIONS (V+ = 3 V)

Parameter

Symbol

Dynamic Characteristics

Test Conditions

Otherwise Unless Specified

V+ = 3 V, "10%, VIN = 0.4 or 1.6 Ve

Tempa

Limits

- 40 to 85_C

Minb Typc Maxb

Turn-On Time

Turn-Off Time

Break-Before-Make Time

Charge Injectiond

Off-Isolationd

Crosstalkd

NO, NC Off Capacitanced

Channel-On Capacitanced

Power Supply

Power Supply Range

Power Supply Current

tON,

(SW1, SW2)

tON,

(SW3, SW4)

tON,

(SW1, SW2)

tON,

(SW3, SW4)

td,

(SW1, SW2)

td,

(SW3, SW4)

QINJ,

(SW1, SW2)

QINJ,

(SW3, SW4)

OIRR,

(SW1, SW2)

OIRR,

(SW3, SW4)

XTALK,

(SW1, SW2)

XTALK,

(SW3, SW4)

COFF,

(SW1, SW2)

COFF,,

(SW3, SW4)

CON,

(SW1, SW2)

CON,

(SW3, SW4)

V+

I+

VNO or VNC = 2.0 V, RL = 300 W, CL = 35 pF

(Figure 1,2)

CL = 1 nF, VGEN = 0 V, RGEN = 0 W

(Figure 3)

RL = 50 W, CL = 5 pF, f = 1 MHz

(Figure 4)

VIN = 0 or V+, f = 1 MHz

VOE = 0 or V+

Room

Full

Room

Full

Room

Full

Room

Full

Full

5

Full

5

Room

Room

Room

2.0

62

85

91

46

74

79

12

35

36

21

46

48

45

26

2

1

- 68

- 51

- 69

- 51

12

43

86

283

5.5

1.0

Notes:

a. Room = 25°C, Full = as determined by the operating suffix.

b. Typical values are for design aid only, not guaranteed nor subject to production testing.

c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.

d. Guarantee by design, nor subjected to production test.

e. VIN = input voltage to perform proper function.

f. Guaranteed by 5-V leakage testing, not production tested.

Unit

ns

pC

dB

pF

V

mA

Document Number: 72228

S-31067—Rev. A, 26-May-03

www.vishay.com

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