DFN3030D-8 データシートの表示（PDF） - Diodes Incorporated.
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DFN3030D-8 Datasheet PDF : 7 Pages
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DLD101
Electrical Characteristics: (Q1) @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
gfs
VSD
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Min
Typ
Max
100
⎯
⎯
⎯
⎯
1
⎯
⎯
±100
2.0
⎯
4.1
⎯
⎯
0.85
⎯
0.99
⎯
0.9
⎯
⎯
0.89
1.1
⎯
129
⎯
⎯
14
⎯
⎯
8
⎯
⎯
3.4
⎯
⎯
0.9
⎯
⎯
1
⎯
⎯
7.9
⎯
⎯
11.4
⎯
⎯
14.3
⎯
⎯
9.6
⎯
Unit
Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 60V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA
Ω
VGS = 10V, ID = 1.5A
VGS = 6V, ID = 1A
S VDS = 15V, ID = 1A
V VGS = 0V, IS = 1.5A
pF
pF
VDS = 50V, VGS = 0V
f = 1.0MHz
pF
nC VDS = 50V, VGS = 10V, ID = 1A
ns VGS = 50V, VDS = 10V,
ID = 1A, RG ≈ 6Ω
Electrical Characteristics: (Q2) @TA = 25°C unless otherwise specified
Characteristic
Input Voltage
Output Voltage
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol Min
VI(off)
0.4
VI(on)
-
VO(on)
-
IO(off)
-
G1
80
R1
3.2
R2/R1
8
fT
-
Typ
-
-
0.05
-
-
4.7
10
260
Notes: 4. Short duration pulse test used to minimize self-heating effect.
Max
-
1.5
0.3
0.5
-
6.2
12
-
Unit
V
V
V
μA
-
kΩ
-
MHz
Test Condition
VCC = 5V, IO = 100μA
VCC = 0.3V, IO = 5mA
IO/II = 5mA/0.25mA
VCC = 50V, VI = 0V
VO = 5V, IO = 10mA
-
-
VCE = 10V, IE = 5mA,
f = 100MHz
DLD101
Document number: DS32007 Rev. 6 - 2
2 of 7
www.diodes.com
February 2010
© Diodes Incorporated
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