RMWL38001 データシートの表示（PDF） - Raytheon Company
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RMWL38001 Datasheet PDF : 7 Pages
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RMWL38001
37-40 GHz Low Noise Amplifier MMIC
Figure 3
Recommended
Application Schematic
Circuit Diagram
Drain Supply
Vd=+4 V
RF IN
10,000pF L
100pF L 100pF L
L
L
MMIC Chip
PRODUCT INFORMATION
L = Bond Wire Inductance
L 10,000pF
L 100pF
L
L
RF OUT
Figure 4
Recommended
Assembly Diagram
Ground
(Back of Chip)
L
L 100pF
L
L 100pF
Gate Supply
Vg
Vdd
(Positive)
10,000pF
10,000pF
Die-Attach
80Au/20Sn
5mil Thick
Alumina
50-Ohm
RF
Input
100pF 100pF
100pF
5 mil Thick
Alumina
50-Ohm
RF
Output
www.raytheon.com/micro
100pF
100pF
2 mil Gap
L< 0.015”
Vg
(4 Places)
(Negative)
Note:
Use 0.003” by 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief.
Characteristic performance data and specifications are subject to change without notice.
Revised March 14 2001
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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