DS2430 データシートの表示（PDF） - Dallas Semiconductor -> Maxim Integrated

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DS2430

256-Bit 1-Wire™ EEPROM

Dallas Semiconductor -> Maxim Integrated 

MEMORY FUNCTION EXAMPLE

DS2430A

Example: Write 2 data bytes to data memory location 0006 and 0007. Read entire data memory.

MASTER MODE

TX

RX

TX

TX

TX

RX

TX

TX

TX

TX

TX

RX

TX

TX

TX

RX

TX

RX

TX

TX

TX

TX

TX

RX

TX

TX

TX

RX

TX

RX

DATA (LSB FIRST)

Reset

Presence

CCh

F0h

Reset

Presence

CCh

0Fh

06h

<2 data bytes>

Reset

Presence

CCh

AAh

06h

<2 data bytes>

Reset

Presence

CCh

55h

A5h

<data line high>

Reset

Presence

CCh

F0h

00h

<32 bytes>

Reset

Presence

COMMENTS

Reset pulse (480-960 µs)

Presence pulse

Issue “Skip ROM” command

Issue “Read Memory” command

Reset pulse (480-960 µs)

Presence pulse

Issue “Skip ROM” command

Issue “Write Scratchpad” command

Start address = 06h

Write 2 bytes of data to scratchpad

Reset pulse

Presence pulse

Issue “Skip ROM” command

Issue “Read Scratchpad” command

Start address = 06h

Read scratchpad data and verify

Reset pulse

Presence pulse

Issue “Skip ROM” command

Issue “Copy Scratchpad” command

Validation key

Data line is held high for 10 ms by the bus master to

provide energy for copying data from the scratchpad to

EEPROM

Reset pulse

Presence pulse

Issue “Skip ROM” command

Issue “Read Memory” command

Start address = 00h

Read EEPROM data page

Reset pulse

Presence pulse

14 of 16

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