EDE1108AJBG データシートの表示（PDF） - Elpida Memory, Inc
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EDE1108AJBG Datasheet PDF : 75 Pages
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EDE1108AJBG, EDE1116AJBG
Speed bin
Parameter
Active bank A to active bank B command period
(EDE1108AJ)
(EDE1116AJ)
Four active window period
(EDE1108AJ)
(EDE1116AJ)
/CAS to /CAS command delay
Write recovery time
Auto precharge write recovery + precharge time
Internal write to read command delay
Internal read to precharge command delay
Exit self-refresh to a non-read command
Exit self-refresh to a read command
Exit precharge power-down to any non-read command
Exit active power-down to read command
Exit active power-down to read command
(slow exit/low power mode)
CKE minimum pulse width (high and low pulse width)
MRS command to ODT update delay
Auto-refresh to active/auto-refresh command time
Average periodic refresh interval
(0°C ≤ TC ≤ +85°C)
(+85°C < TC ≤ +95°C)
Minimum time clocks remains ON after CKE
asynchronously drops low
Symbol
tRRD
tRRD
tFAW
tFAW
tCCD
tWR
tDAL
tWTR
tRTP
tXSNR
tXSRD
tXP
tXARD
tXARDS
tCKE
tMOD
tRFC
tREFI
tREFI
tDELAY
-8E
DDR2-800 (5-5-5)
min.
max.
7.5
10
35
45
2
15
WR + RU
(tRP/tCK(avg))
7.5
7.5
tRFC + 10
200
2
2
8 − AL
3
0
12
127.5
7.8
3.9
tIS + tCK(avg)
+ tIH
Unit
Notes
ns
ns
ns
ns
nCK
ns
nCK
1, 9
ns
14
ns
ns
nCK
nCK
nCK
3
nCK
2, 3
nCK
ns
15
ns
µs
µs
ns
Data Sheet E1732E21 (Ver.2.1)
14
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