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TQ5622 データシートの表示(PDF) - TriQuint Semiconductor

部品番号
コンポーネント説明
メーカー
TQ5622
TriQuint
TriQuint Semiconductor TriQuint
TQ5622 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
TQ5622
Data Sheet
Electrical Characteristics1,2
Parameter
RF Frequency
Conditions
Min.
Typ/Nom
Max.
Units
1930
1990
MHz
LO Frequency
2015
2140
MHz
IF Frequency
85
150
MHz
LO input level
-7
-4
0
dBm
Supply voltage
2.7
2.8
4.0
V
Gain
16.0
17.5
dB
Gain Variation vs. Temp.
-40 to 85 °C
+/-2.0
dB
Noise Figure
Input 3rd Order Intercept
2.8
-11.0
-9
3.5
dB
dBm
Return Loss
LNA input – with external match
10
dB
LNA output
10
dB
Mixer RF input, externally matched
10
dB
Mixer LO input
10
dB
Isolation
LO to LNA RF in
35
dB
LO to IF; after external IF match
40
dB
RF to IF; after external IF match
20
dB
IF Output Impedance
Vdd = 2.8V; Sleep mode, Device On
500
Ohm
Vdd = 2.8V; Sleep mode, Device Off
Approx. Open
Ohm
Vdd = 0V
<50
Ohm
Power Down, “sleep”
Device On Voltage
Device Off Voltage
Vdd
Vdd
VDC
0
0
VDC
Supply Current, Sleep mode, Device On Tc = + 25 °C
12
15
mA
Supply Current, Sleep mode, Device Off Enable voltage = 0, LO Drive off
100
1000
µA
Operating Temperature, case
-40
25
+85
°C
Note 1: Test Conditions: Vdd=2.8VDC, Filter IL=2.5dB, RF=1960MHz, LO=2095MHz, IF=135MHz, LO input=-7dBm, TC = 25°C, unless otherwise specified.
Note 2: Min./Max. limits are at +25°C case temperature unless otherwise specified.
Absolute Maximum Ratings
Parameter
DC Power Supply
Power Dissipation
Operating Temperature
Storage Temperature
Signal level on inputs/outputs
Voltage to any non supply pin
Value
Units
5.0
V
500
mW
-55 to 100
°C
-60 to 150
°C
+20
dBm
-0.3 to Vdd + 0.3
V
2
For additional information and latest specifications, see our website: www.triquint.com

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