EN25P40 データシートの表示（PDF） - Eon Silicon Solution Inc.

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EN25P40

4 Mbit Uniform Sector, Serial Flash Memory

Eon Silicon Solution Inc. 

EN25P40

Figure 19. Power-up Timing

Table 7. Power-Up Timing and Write Inhibit Threshold

Symbol

tVSL(1)

tPUW(1)

VWI(1)

Parameter

VCC(min) to CS# low

Time delay to Write instruction

Write Inhibit Voltage

Note:

1.The parameters are characterized only.

Min.

10

1

1

Max. Unit

µs

10

ms

2

V

INITIAL DELIVERY STATE

The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh). The

Status Register contains 00h (all Status Register bits are 0).

Table 8. DC Characteristics

This Data Sheet may be revised by subsequent versions 20 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw

or modifications due to changes in technical specifications.

Rev. D, Issue Date: 2006/12/25

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