FDD6635 データシートの表示（PDF） - Fairchild Semiconductor
部品番号
コンポーネント説明
メーカー
FDD6635 Datasheet PDF : 8 Pages
| |||
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain–Source Diode Characteristics
VSD
Drain–Source Diode Forward
VGS = 0 V,
Voltage
trr
Diode Reverse Recovery Time
IF = 15 A,
Qrr
Diode Reverse Recovery Charge
IS = 15 A
(Note 2)
diF/dt = 100 A/µs
0.8 1.2
V
26
ns
16
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA = 40°C/W when mounted on a
1in2 pad of 2 oz copper
b) RθJA = 96°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%
3. Maximum current is calculated as:
PD
R DS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
4. BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device.
5. Starting TJ = 25°C, L = 1mH, IAS = 15A, VDD = 35V, VGS = 10V
FDD6635 Rev. C2(W)
www.fairchildsemi.com
Share Link: 