FDB10AN06A0 データシートの表示（PDF） - Fairchild Semiconductor
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FDB10AN06A0 Datasheet PDF : 11 Pages
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Typical Characteristics TC = 25°C unless otherwise noted
1.2
1.2
VGS = VDS, ID = 250µA
ID = 250µA
1.0
1.1
0.8
1.0
0.6
0.4
-80
-40
0
40
80
120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
0.9
-80
-40
0
40
80
120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
3000
1000 COSS ≅ CDS + CGD
CRSS = CGD
CISS = CGS + CGD
10
VDD = 30V
8
6
4
100
VGS = 0V, f = 1MHz
50
0.1
1
10
60
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs Drain to Source
Voltage
WAVEFORMS IN
2
DESCENDING ORDER:
ID = 75A
ID = 12A
0
0
5
10
15
20
25
30
Qg, GATE CHARGE (nC)
Figure 14. Gate Charge Waveforms for Constant
Gate Currents
©2002 Fairchild Semiconductor Corporation
FDB10AN06A0 / FDP10AN06A0 Rev. A
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