FDB10AN06A0 データシートの表示（PDF） - Fairchild Semiconductor

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FDB10AN06A0

N-Channel PowerTrench® MOSFET 60V, 75A, 10.5mΩ

Fairchild Semiconductor 

Test Circuits and Waveforms

VARY tP TO OBTAIN

REQUIRED PEAK IAS

RG

VGS

tP

0V

VDS

L

DUT

+

VDD

-

IAS

0.01Ω

Figure 15. Unclamped Energy Test Circuit

tP

IAS

BVDSS

VDS

VDD

0

tAV

Figure 16. Unclamped Energy Waveforms

VGS

Ig(REF)

VDS

L

DUT

+

VDD

-

Figure 17. Gate Charge Test Circuit

VDD

Qgs2

VDS

Qg(TOT)

VGS

VGS = 10V

VGS = 2V

0

Qg(TH)

Qgs

Ig(REF)

0

Qgd

Figure 18. Gate Charge Waveforms

VDS

RL

VGS

RGS

DUT

+

VDD

-

VGS

Figure 19. Switching Time Test Circuit

VDS

tON

td(ON)

tr

90%

tOFF

td(OFF)

tf

90%

10%

0

10%

VGS

10%

0

50%

PULSE WIDTH

90%

50%

Figure 20. Switching Time Waveforms

©2002 Fairchild Semiconductor Corporation

FDB10AN06A0 / FDP10AN06A0 Rev. A

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