FDS3692 データシートの表示（PDF） - Fairchild Semiconductor
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FDS3692 Datasheet PDF : 11 Pages
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September 2002
FDS3692
N-Channel PowerTrench® MOSFET
100V, 4.5A, 60mΩ
Features
• rDS(ON) = 50mΩ (Typ.), VGS = 10V, ID = 4.5A
• Qg(tot) = 11nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• Optimized efficiency at high frequencies
• UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82745
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems
Branding Dash
5
1
2
3
4
SO-8
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TA = 25oC, VGS = 10V, RθJA = 50oC/W)
Continuous (TA = 100oC, VGS = 10V, RθJA = 50oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Thermal Characteristics
RθJA
RθJA
RθJC
Thermal Resistance, Junction to Ambient at 10 seconds (Note 3)
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)
Thermal Resistance, Junction to Case (Note 2)
Package Marking and Ordering Information
Device Marking
FDS3692
Device
FDS3692
Package
SO-8
Reel Size
330mm
5
4
6
3
7
2
8
1
Ratings
100
±20
4.5
2.8
Figure 4
171
2.5
20
-55 to 150
Units
V
V
A
A
A
mJ
W
mW/oC
oC
50
oC/W
85
oC/W
25
oC/W
Tape Width
12mm
Quantity
2500 units
©2002 Fairchild Semiconductor Corporation
FDS3692 Rev. B
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