FDS4897AC データシートの表示（PDF） - Fairchild Semiconductor
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FDS4897AC Datasheet PDF : 10 Pages
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Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted
10
ID = 6.1 A
8
VDD = 15 V
6
VDD = 20 V
VDD = 25 V
4
2
0
0
4
8
12
16
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
2000
1000
Ciss
Coss
100
Crss
f = 1 MHz
VGS = 0 V
10
0.1
1
10
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
10
9
8
7
6
5
4
3
TJ = 125 oC
TJ = 25 oC
2
1
0.01
0.1
1
tAV, TIME IN AVALANCHE (ms)
10 20
Figure 9. Unclamped Inductive
Switching Capability
7
6
5
VGS = 10 V
4
VGS = 4.5 V
3
2
1
RθJA = 78 oC/W
0
25
50
75
100
125
150
TC, AMBIENT TEMPERATURE (oC)
Figure 10. Maximum Continuous Drain
Current vs Ambient Temperature
30
10
100 us
1
0.1
0.01
0.01
1 ms
THIS AREA IS
LIMITED BY rDS(on)
10 ms
100 ms
SINGLE PULSE
TJ = MAX RATED
RθJA = 135 oC/W
TA = 25 oC
0.1
1
10
VDS, DRAIN to SOURCE VOLTAGE (V)
1s
10 s
DC
100 200
Figure 11. Forward Bias Safe
Operating Area
1000
VGS = 10 V
100
10
SINGLE PULSE
RθJA = 135 oC/W
TA = 25 oC
1
0.5
10-4 10-3 10-2 10-1
1
10 100 1000
t, PULSE WIDTH (sec)
Figure 12. Single Pulse Maximum
Power Dissipation
©2008 Fairchild Semiconductor Corporation
5
FDS4897AC Rev.C
www.fairchildsemi.com
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