FDW2520 データシートの表示（PDF） - Fairchild Semiconductor

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FDW2520

Complementary PowerTrench® MOSFET

Fairchild Semiconductor 

November 2000

FDW2520C

Complementary PowerTrench MOSFET

General Description

This complementary MOSFET device is produced using

Fairchild’s advanced PowerTrench process that has

been especially tailored to minimize the on-state

resistance and yet maintain low gate charge for

superior switching performance.

Applications

• DC/DC conversion

• Power management

• Load switch

Features

• Q1: N-Channel

6 A, 20 V.

RDS(ON) = 18 mΩ @ VGS = 4.5 V

RDS(ON) = 28 mΩ @ VGS = 2.5 V

• Q2: P-Channel

–4.4A, 20 V. RDS(ON) = 35 mΩ @ VGS = –4.5 V

RDS(ON) = 57 mΩ @ VGS = –2.5 V

• High performance trench technology for extremely

low RDS(ON)

• Low profile TSSOP-8 package

G2

S2

S2

D2

TSSOP-8

G1

S1

S1

D1

Pin 1

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol

Parameter

VDSS

VGSS

ID

PD

TJ, TSTG

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

Power Dissipation

(Note 1a)

(Note 1a)

(Note 1b)

Operating and Storage Junction Temperature Range

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1b)

Package Marking and Ordering Information

Device Marking

Device

Reel Size

2520C

FDW2520C

13’’

Q1

1

2

3

4

Q2

8

7

6

5

Q1

Q2

20

–20

±12

±12

6

–4.4

30

–30

1.0

0.6

–55 to +150

Units

V

V

A

W

°C

125

°C/W

208

Tape width

12mm

Quantity

3000 units

2000 Fairchild Semiconductor Corporation

FDW2520C Rev C(W)

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