FQD10N20LTM データシートの表示（PDF） - Fairchild Semiconductor
部品番号
コンポーネント説明
メーカー
FQD10N20LTM Datasheet PDF : 9 Pages
| |||
Typical Characteristics
Top :
V
GS
10 V
8.0 V
101
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
100
10-1
10-1
※ Notes :
1. 250μs Pulse Test
2. T = 25℃
C
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
1.6
V = 5V
GS
1.2
V = 10V
GS
0.8
0.4
※ Note : TJ = 25℃
0.0
0
5
10
15
20
25
ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1500
1200
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
900
C
iss
600
Coss
※ Notes :
1. V = 0 V
300
C
2. f = 1 MHz
rss
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor Corporation
FQD10N20L / FQU10N20L Rev. C0
101
150℃
100
25℃
10-1
0
-55℃
※ Notes :
1. VDS = 30V
2. 250μs Pulse Test
2
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃ 25℃
※ Notes :
1. V = 0V
GS
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = 40V
8
DS
V = 100V
DS
V = 160V
6
DS
4
2
※ Note : ID = 10 A
0
0
4
8
12
16
20
24
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
www.fairchildsemi.com
Share Link: 