FQT4N20L(2001) データシートの表示（PDF） - Fairchild Semiconductor
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FQT4N20L Datasheet PDF : 8 Pages
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Typical Characteristics
VGS
Top : 10 V
8.0 V
6.0 V
5.0 V
4.5 V
100
4.0 V
3.5 V
Bottom : 3.0 V
10-1
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
8
6
V =5V
GS
V = 10V
GS
4
2
0
0
2
4
6
8
ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
450
400
350
300
250
200
150
100
50
0
10-1
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
C =C
rss gd
C
iss
C
oss
C
rss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
100
150℃
25℃
-55℃
※ Notes :
1.
2.
2V5DS0μ=
30V
s Pulse
Test
10-1
0
2
4
6
8
10
VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
100
10-1
0.2
150℃ 25℃
※ Notes :
1. V = 0V
2. 25G0Sμ s Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = 40V
DS
V = 100V
DS
8
VDS = 160V
6
4
2
※ Note : ID = 3.8 A
0
0
1
2
3
4
5
6
7
8
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, May 2001
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