FSD200B データシートの表示（PDF） - Fairchild Semiconductor
部品番号
コンポーネント説明
メーカー
FSD200B Datasheet PDF : 18 Pages
| |||
FSD210B, FSD200B
Electrical Characteristics
(Ta = 25°C unless otherwise specified)
Parameter
Symbol
Condition
Min. Typ. Max. Unit
SENSE FET SECTION
Zero-Gate-Voltage Drain Current
IDSS VDS=560V, VGS=0V
-
- 100 µA
Drain-Source On-State Resistance
Tj=25°C, ID=25mA
RDS(ON) Tj=100°C, ID=25mA
-
28 32
Ω
-
42 48
Rise Time
tr
VDS=325V, ID=50mA
- 100 -
ns
Fall Time
tf
VDS=325V, ID=25mA
-
50
-
ns
CONTROL SECTION
Switching Frequency
fOSC Tj=25°C
126 134 142 KHz
Switching Frequency Modulation Range ∆fMOD Tj=25°C
-
±4
- KHz
Maximum Duty Cycle
DMAX VFB=3.5V
60 66 72 %
Minimum Duty Cycle
DMIN VFB=GND
0
0
0
%
UVLO Threshold Voltage (FSD200B)
VSTART
VSTOP After turn on
6.3 7 7.7 V
5.3 6 6.7 V
UVLO Threshold Voltage (FSD210B)
VSTART
VSTOP After turn on
8.0 8.7 9.4 V
6.0 6.7 7.4 V
Feedback Source Current
IFB
VFB=GND
0.22 0.25 0.28 mA
Internal Soft Start Time
tS/S
-
3
-
ms
BURST MODE SECTION
Burst Mode Voltage
VBURH
VBURL
Tj=25°C
0.58 0.64 0.7 V
0.5 0.58 0.64 V
VBUR(HYS) Hysteresis
-
60
-
mV
PROTECTION SECTION
Peak Current Limit
Current Limit Delay Time(1)
Thermal Shutdown Temperature(1)
ILIM
tCLD
TSD
∆i/∆t=150mA/us
Tj=25°C
0.275 0.320 0.365 A
- 220 -
ns
125 145 160 °C
Shutdown Feedback Voltage
Leading Edge Blanking Time(2)
VSD
tLEB
4.0 4.5 5.0 V
200 -
-
ns
Shutdown Delay Current
IDELAY VFB=4.0V
3
5
7
µA
TOTAL DEVICE SECTION
Operating Supply Current (FSD200B)
IOP
(control part only),VCC=7V -
600
-
µA
Start-Up Charging Current (FSD200B)
ICH
VCC=0V
-
1 1.2 mA
Operating Supply Current (FSD210B)
IOP
(control part only),VCC=11V -
700
-
µA
Start-Up Charging Current (FSD210B)
ICH
VCC=0V
- 700 900 µA
Vstr Supply Voltage
VSTR VCC=0V
20
-
-
V
Vcc Regulation Voltage (FSD200B)
VCCREG
-
7
-
V
Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameter is derived from characterization
5
Share Link: 